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dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChang, Chih-Tienen_US
dc.contributor.authorChao, Kuo-Yien_US
dc.contributor.authorChen, Jin-Lien_US
dc.date.accessioned2014-12-08T15:07:52Z-
dc.date.available2014-12-08T15:07:52Z-
dc.date.issued2010en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/6188-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3355904en_US
dc.description.abstractA reference field effect transistor (FET) fabrication method by using a perfluorosulfonated proton exchange membrane associated with ion-insensitive polymers is proposed. The single-layer film of the perfluorosulfonated polymer/photoresist composite among the eight films tested demonstrated the best performance of 5.8 mV/pH and 11.27 mV/pNa sensitivities. Meanwhile, the drift performances were 3.5 mV/h and less than 1 mV/h for the first and second 4 h tests. A high sensitivity of 52.1 mV/pH and a low interference of 4.61 mV/pNa were obtained in the range of pH 1-13 through the differential arrangement with ZrO(2) gate ion-sensitive field-effect transistors (ISFETs). Meanwhile, the transconductance match of the proposed reference FET/ISFET pair would simplify the differential readout circuits.en_US
dc.language.isoen_USen_US
dc.subjectcomposite materialsen_US
dc.subjectelectrochemical electrodesen_US
dc.subjection exchangeen_US
dc.subjection sensitive field effect transistorsen_US
dc.subjectphotoresistsen_US
dc.subjectpolymer filmsen_US
dc.titleDevelopment of FET-Type Reference Electrodes for pH-ISFET Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3355904en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume157en_US
dc.citation.issue5en_US
dc.citation.spageJ143en_US
dc.citation.epageJ148en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000276555300075-
dc.citation.woscount3-
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