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dc.contributor.author王智偉en_US
dc.contributor.authorWang, Chih-Weien_US
dc.contributor.author吳光雄en_US
dc.contributor.authorK.H.Wuen_US
dc.date.accessioned2014-12-12T02:17:38Z-
dc.date.available2014-12-12T02:17:38Z-
dc.date.issued1996en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT850429017en_US
dc.identifier.urihttp://hdl.handle.net/11536/62051-
dc.description.abstract本論文將詳細報告鈦酸鍶(110)基板上(103)YBCO薄膜的成長過程及其各向 異性物理性質。首先，介紹利用雷射蒸鍍法即時製備不同厚度薄膜的技術 ，並詳細描述利用此技術及AFM研究鈦酸鍶(110)基板上(103)YBCO薄膜成 長演進的結果。接著，我們比較此類薄膜在鈦酸鍶(110)基板上沿[110]s 及[001]s方向在電阻－溫度特性、臨界電流密度及釘扎機制間的差異，並 評估將這類薄膜運用在元件上的可行性。 In this thesis, we report the growth process and anisotropic physical properties of (103)YBCO thin films on STO(110) substrate in detail. First, we illustrate how we fabricated in- situ thin films with different thickness by PLD and describe explicitly the growth evolution of (103)YBCO thin films on STO(110) substrates by AFM. And then, we compare the R-T characteristics, critical current densities and pinning mechanism of this type of thin film between [110]s and [001]s substrate directions. Additionally thzh_TW
dc.language.isozh_TWen_US
dc.subject雷射蒸鍍zh_TW
dc.subject鈦酸鍶(110)zh_TW
dc.subject釔鋇銅氧(103)zh_TW
dc.subject成長演進zh_TW
dc.subject各向異性zh_TW
dc.subject釘扎機制zh_TW
dc.subjectPLDen_US
dc.subjectSrTiO3(110)en_US
dc.subjectYBCO(103)en_US
dc.subjectGrowth evolutionen_US
dc.subjectanisotropicen_US
dc.subjectpinning mechanismen_US
dc.title鈦酸鍶(110)基板上(103)YBCO薄膜的成長演進及其各向異性物理性質的探討zh_TW
dc.titleGrowth Evolution and Anisotropic Physical Properties of (103)YBCO Thin Films on SrTiO3(110) Substrateen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
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