標題: 鈦酸鍶(110)基板上(103)YBCO薄膜的成長演進及其各向異性物理性質的探討
Growth Evolution and Anisotropic Physical Properties of (103)YBCO Thin Films on SrTiO3(110) Substrate
作者: 王智偉
Wang, Chih-Wei
吳光雄
K.H.Wu
電子物理系所
關鍵字: 雷射蒸鍍;鈦酸鍶(110);釔鋇銅氧(103);成長演進;各向異性;釘扎機制;PLD;SrTiO3(110);YBCO(103);Growth evolution;anisotropic;pinning mechanism
公開日期: 1996
摘要: 本論文將詳細報告鈦酸鍶(110)基板上(103)YBCO薄膜的成長過程及其各向
異性物理性質。首先,介紹利用雷射蒸鍍法即時製備不同厚度薄膜的技術
,並詳細描述利用此技術及AFM研究鈦酸鍶(110)基板上(103)YBCO薄膜成
長演進的結果。接著,我們比較此類薄膜在鈦酸鍶(110)基板上沿[110]s
及[001]s方向在電阻-溫度特性、臨界電流密度及釘扎機制間的差異,並
評估將這類薄膜運用在元件上的可行性。
In this thesis, we report the growth process and anisotropic
physical properties of (103)YBCO thin films on STO(110)
substrate in detail. First, we illustrate how we fabricated in-
situ thin films with different thickness by PLD and describe
explicitly the growth evolution of (103)YBCO thin films on
STO(110) substrates by AFM. And then, we compare the R-T
characteristics, critical current densities and pinning
mechanism of this type of thin film between [110]s and [001]s
substrate directions. Additionally th
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT850429017
http://hdl.handle.net/11536/62051
顯示於類別:畢業論文