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dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorHsu, H. H.en_US
dc.contributor.authorHsieh, I. J.en_US
dc.contributor.authorDeng, C. K.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorYeh, F. S.en_US
dc.date.accessioned2014-12-08T15:07:53Z-
dc.date.available2014-12-08T15:07:53Z-
dc.date.issued2010en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/6207-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3294495en_US
dc.description.abstractIn this study, we successfully fabricated high-kappa Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400 C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of similar to 17 fF/mu m(2) at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-alpha) of 866 ppm/V(2) at a 10.3 fF/mu m(2) density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher-kappa TiCeO dielectrics, and a high work-function Ir metal. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3294495] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleHigh-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3294495en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume13en_US
dc.citation.issue4en_US
dc.citation.spageH112en_US
dc.citation.epageH115en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000274390800020-
dc.citation.woscount0-
Appears in Collections:Articles