標題: High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment
作者: Cheng, C. H.
Hsu, H. H.
Hsieh, I. J.
Deng, C. K.
Chin, Albert
Yeh, F. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: In this study, we successfully fabricated high-kappa Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400 C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of similar to 17 fF/mu m(2) at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-alpha) of 866 ppm/V(2) at a 10.3 fF/mu m(2) density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher-kappa TiCeO dielectrics, and a high work-function Ir metal. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3294495] All rights reserved.
URI: http://hdl.handle.net/11536/6207
http://dx.doi.org/10.1149/1.3294495
ISSN: 1099-0062
DOI: 10.1149/1.3294495
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 13
Issue: 4
起始頁: H112
結束頁: H115
顯示於類別:期刊論文