單晶壓控振盪器及時域洩漏波放射研究

Abstract

本研究第一部份提出一個新型的單晶砷化鎵積體變壓式壓控振盪 器電路,係利用全波電磁軟體來開發兩層金屬的變壓器及採用本實驗室所 自行萃取的主動元件參數以進行設計. 最後設計出來的振盪器其中心頻率 為 1.7 GHz, 可達9.4%可調範圍, 10 dBm 的輸出功率, 大於 20dB 的諧 波抑制, 相位雜訊為 -91dBc/Hz於頻率平移 100 KHz之處.整個電路晶片 的面積為 900um * 900um. 第二部份敘述時域差分法在電磁波的 應用, 包括四個主題, 分別是散射參數萃取, 時域洩漏波現象, 主模萃取 及高階模萃取. Part I of the thesis describes a novel transformer-type GaAs MMIC VCO design. This work employs full-wave electromagnetic wave simulator to designtwo metal layer transformer and adopts the active device model extracted in Applied EM-wave Laboratory to implement the varactor component. The GaAs MMIC has been developed with 9.4% tuning range at 1.7GHz, 10 dBm output power, < -20dB harmonic supression, and the phase noise -91dBc/Hz at offset 100KHz. The chip size is 900um by 900um. The part II of the thesis describes the applications of finite-difference time-domain in electromagnetics. Four subjects of interest are studied, including S-parameters extraction, time domain leaky wave phenomena,dominant mode extraction and higher-order mode extraction.