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dc.contributor.authorLiang, Yuan-Changen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.date.accessioned2014-12-08T15:07:54Z-
dc.date.available2014-12-08T15:07:54Z-
dc.date.issued2010en_US
dc.identifier.issn1466-8033en_US
dc.identifier.urihttp://hdl.handle.net/11536/6220-
dc.identifier.urihttp://dx.doi.org/10.1039/c004452ken_US
dc.description.abstractZr-doped In(2)O(3) (Zr-In(2)O(3)) (222) epitaxial layers of thickness 210 nm were grown on yttria-stabilized zirconia (YSZ) (111) and Al(2)O(3) (0001) substrates with rf magnetron sputtering at 350 degrees C in an atmosphere deficient in oxygen. X-Ray scattering and use of a transmission electron microscope (TEM) revealed Zr-In(2)O(3) films to be deposited epitaxially on YSZ (111) and Al(2)O(3) (0001). Images observed with an atomic-force microscope demonstrate that the substrate profoundly affected the topography of the Zr-In(2)O(3) (222) epilayers. The large mismatch of the Zr-Al(2)O(3) (222)/Al(2)O(3) (0001) heteroepitaxy was responsible for the surface structure of the epilayer being rougher than that on YSZ (111). Cross-sectional TEM images reveal dense crystalline films with no macroscopic imperfection; the crystalline order of Zr-In(2)O(3) epilayers is preserved up to the top surface. The Zr-In(2)O(3) (222)/YSZ (111) heteroepitaxy has a Hall mobility greater than that of Zr-In(2)O(3) (222)/Al(2)O(3) (0001), perhaps due to the greater lattice mismatch of the Zr-In(2)O(3) (222)/Al(2)O(3) (0001) heteroepitaxy that results in Zr-In(2)O(3) having a poor crystalline quality. Domain boundaries on a nanometre scale were found in the heteroepitaxial Zr-In(2)O(3) (222)/Al(2)O(3) (0001) resulting from random nucleation and relaxation of misfit stress. The existence of these domain boundaries on a nanometre scale thus affects the electrical properties of the Zr-In(2)O(3) epilayer.en_US
dc.language.isoen_USen_US
dc.titleGrowth of epitaxial zirconium-doped indium oxide (222) at low temperature by rf sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c004452ken_US
dc.identifier.journalCRYSTENGCOMMen_US
dc.citation.volume12en_US
dc.citation.issue10en_US
dc.citation.spage3172en_US
dc.citation.epage3176en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000282219100078-
dc.citation.woscount12-
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