Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Chih-Chiang | en_US |
dc.contributor.author | Cheng, Wei-Yun | en_US |
dc.contributor.author | Lu, Shih-Yuan | en_US |
dc.contributor.author | Lin, Yi-Feng | en_US |
dc.contributor.author | Hsu, Yung-Jung | en_US |
dc.contributor.author | Chang, Kai-Shiun | en_US |
dc.contributor.author | Kang, Chao-Hsiang | en_US |
dc.contributor.author | Tung, Kuo-Lun | en_US |
dc.date.accessioned | 2014-12-08T15:07:54Z | - |
dc.date.available | 2014-12-08T15:07:54Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.issn | 1466-8033 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6221 | - |
dc.identifier.uri | http://dx.doi.org/10.1039/c000728e | en_US |
dc.description.abstract | Well-aligned, densely distributed ZrO(2) nanorod arrays were fabricated using a non-catalytic, template-free metal-organic chemical vapour deposition process at a reaction temperature of 1000 degrees C. The reaction temperature was found to play a key role in product morphology, with particle thin films obtained at 550 degrees C and nanorod arrays produced at 1000 degrees C. Increasing the reaction temperature led to the emergence of the medium-temperature tetragonal phase from the dominant low-temperature monoclinic phase, which is advantageous for anisotropic growth necessary for the nanorod formation. With the same deposition process, yttria-stabilized zirconia nanorod arrays of polycrystalline cubic phase were fabricated by co-feeding the dopant precursor, YCl(3), with the zirconia precursor, Zr(C(5)H(7)O(2))(4). The present work demonstrated the first example of monoclinic to tetragonal phase-transition assisted one-dimensional (1D) growth, and the concept can be extended to the formation of 1D nanostructures of materials possessing the monoclinic-tetragonal polymorphism. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth of zirconia and yttria-stabilized zirconia nanorod arrays assisted by phase transition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c000728e | en_US |
dc.identifier.journal | CRYSTENGCOMM | en_US |
dc.citation.volume | 12 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 3664 | en_US |
dc.citation.epage | 3669 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000283315900059 | - |
dc.citation.woscount | 8 | - |
Appears in Collections: | Articles |
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