完整後設資料紀錄
DC 欄位語言
dc.contributor.author王嘉維en_US
dc.contributor.authorWang, Jia-Weien_US
dc.contributor.author張振雄en_US
dc.contributor.authorChang, Chen-Shiungen_US
dc.date.accessioned2014-12-12T02:18:03Z-
dc.date.available2014-12-12T02:18:03Z-
dc.date.issued1996en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT853124022en_US
dc.identifier.urihttp://hdl.handle.net/11536/62313-
dc.description.abstract本研究是以垂直布氏長晶法在不同溫度梯度下生長 AgGaS2 單晶。在所生長之單晶內部觀察到影響晶體穿透率的析出物,經 Ag2S在 900℃ 下8天的熱處理,析出物明顯的消除具晶體的穿透率亦顯著提昇。此外藉由各式量測,得到所長晶體的穿透範圍為 0.48→13μm;有效倍頻係數在1.064μm為0.77pm/V;室溫下能隙為2.682eV。 由於晶體生長的降溫過程中,晶體 C 軸熱縮冷漲現象產生的應力造成晶體內部雙晶的形成。為了消除這應力,建議使用 C 軸方向的晶體作為長晶晶種。於是採用全光學的方法取代傳統 X-ray 方法測定晶體光軸,其準確度可達一度以內。zh_TW
dc.description.abstractIn this study, the Silver thiogallate (AgGaS2) single crystals were grown by Vertical Bridgman method under different temperature gradients. In the as-grown crystals, we observe lots of precipates exited in the crystals which dominate the transmittance of light. After heat treatment with 0.5% Ag2S at 900℃ for 8 days, these precipates have been reduced significantly and the transmission of light in crystals have been apparently improved. By using various measurements, we obtain that the transmission range is 0.48→13 μm; the effective SHG coefficient at 1.064μm is 0.77 pm/V; and the energy band-gap at room temperature is 2.682 eV. Due to the stress resulting from thermal expansion in the crystals during the cooling process, a few twins were generated. In order to ease this stress during cooling, we suggest to use a c-axis oriented seeded crystal for the crystal growth. Instead of using conventional X-ray method, we develop a full optical technique to find the crystal's c-axis, and its axis direction can be precisely determined to less than 1 degree.en_US
dc.language.isozh_TWen_US
dc.subject晶體zh_TW
dc.subjectSingle Crystal AgGaS2en_US
dc.titleAgGaS2單晶生長與光學性質之研究zh_TW
dc.titleThe Growth and Optical Properties of Single Crystal AgGaS2en_US
dc.typeThesisen_US
dc.contributor.department光電工程學系zh_TW
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