標題: Hybrid TiO(x)/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters
作者: Sung, Chao-Feng
Kekuda, Dhananjay
Chu, Li Fen
Chen, Fang-Chung
Cheng, Shiau-Shin
Lee, Yuh-Zheng
Wu, Meng-Chyi
Chu, Chih-Wei
光電工程學系
Department of Photonics
公開日期: 1-一月-2010
摘要: In this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (similar to 30 nm) fluoropolymer Cytop (R) layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k similar to 20). The combined p-type and n-type field-effect transistors show similar saturation mobility similar to 0.3 cm(2)/Vs to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2009.09.020
http://hdl.handle.net/11536/6239
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2009.09.020
期刊: ORGANIC ELECTRONICS
Volume: 11
Issue: 1
起始頁: 154
結束頁: 158
顯示於類別:期刊論文