完整後設資料紀錄
DC 欄位語言
dc.contributor.author張聖育en_US
dc.contributor.authorZhang, Sheng-Yuen_US
dc.contributor.author李威儀en_US
dc.contributor.authorLi, Wei-Yien_US
dc.date.accessioned2014-12-12T02:18:19Z-
dc.date.available2014-12-12T02:18:19Z-
dc.date.issued1996en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT854429003en_US
dc.identifier.urihttp://hdl.handle.net/11536/62499-
dc.description.abstractIn this thesis , Reactive Ion Etch of GaP,InGaP,GaN in BCl3/ Ar plasmais studied. The best etching conditions and mask materials are suggested.Higher etch rates and better etched features and sharp side wall profilescan be obtained with higher Ar fraction. Under lower pressure conditions,higher ion density, cleaner etched features and enhanced ion bombardmentin the vertical direction are observed.It is confirmed that etching materials with strong chemical bonds, such as GaN ,requires high ion densityor ion energy. Experiments also show that nickel film is the most stable maskmaterial, compared to SiOx and photoresist.zh_TW
dc.language.isozh_TWen_US
dc.subject活性化離子蝕刻zh_TW
dc.subjectⅢ-Ⅴ化合物zh_TW
dc.subject氮化鎵zh_TW
dc.subjectⅢ-Ⅴ Compoundszh_TW
dc.subject電子物理zh_TW
dc.subject電子工程zh_TW
dc.subjectReactive Ion Etchingen_US
dc.subjectGaNen_US
dc.subjectELECTROPHYSICSen_US
dc.subjectELECTRONIC-ENGINEERINGen_US
dc.titleReactive Ion Etch of Ⅲ-Ⅴ Compound Semiconductorzh_TW
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
顯示於類別:畢業論文