| 標題: | 複晶矽氧化層薄膜界面特性及電性之研究 Study on the interface and electrical characteristics of polysilicon oxides |
| 作者: | 王屏薇 鄭晃忠 電子研究所 |
| 公開日期: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT856430110 http://hdl.handle.net/11536/62544 |
| Appears in Collections: | Thesis |
- 以N2O氣體之快速加熱氮化於複晶矽氧化層及薄膜電晶體之研究 / 高泉豪;Kao Chyuan-Haur;李崇仁;Chung-Len Lee
- A method to characterize n(+)-polysilicon/oxide interface traps in ultrathin oxides / Chang, KM;Chung, YH;Lee, TC;Sun, YL
- Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon / Wu, SL;Chen, CY;Lin, TY;Lee, CL;Lei, TF
- 快速熱退火及複晶矽處理對複晶矽介電質之影響 / 王健俞;Jiann-Yu Wang;張國明;Kow-Ming Chang
- 氫氟酸氣態清洗及氮摻雜於閘極氧化層與複晶矽氧化層之應用 / 陳建亨;Jiann Heng Chen;雷添福;趙天生;Tan Fu Lei
- Polarity asymmetry of polyoxide grown on phosphorus in situ doped polysilicon / Kao, Chyuan Haur;Lai, Chao Sung;Lee, Chung Len
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