標題: | Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications |
作者: | Huang, Jui-Chien Hsu, Heng-Tung Chang, Edward-Yi Lu, Chung-Yu Chang, Chia-Ta Kuo, Fang-Yao Chen, Yi-Chung Hsu, Ting-Hung 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2010 |
摘要: | A field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) was fabricated. Investigations on the linearity characteristics were performed through two-tone and wide band code division multiple access (WCDMA) modulated excitations. The FP-HEMT exhibited an improved breakdown voltage of 160 V compared with that of the conventional HEMT. Additionally, a higher output power of 25.4 dBm with 43% power added efficiency at a 30 V drain bias at 2 GHz was achieved. When biased at 30 V and 15 mA/mm current density, the third-order intermodulation (IM3) level was measured to be -27.1 dBc (at P(1dB)) and the adjacent channel power rejection (ACPR) was -33.8 dBc (at P(1dB)) under WCDMA modulation at 2 GHz. Measurement results revealed that the field-plated structure improved the linearity performance over the conventional structure at high output power levels even beyond P(1dB). (C) 2010 The Japan Society of Applied Physics |
URI: | http://hdl.handle.net/11536/6276 http://dx.doi.org/10.1143/JJAP.49.014103 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.49.014103 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 49 |
Issue: | 1 |
顯示於類別: | 期刊論文 |