標題: Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
作者: Huang, Jui-Chien
Hsu, Heng-Tung
Chang, Edward-Yi
Lu, Chung-Yu
Chang, Chia-Ta
Kuo, Fang-Yao
Chen, Yi-Chung
Hsu, Ting-Hung
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: A field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) was fabricated. Investigations on the linearity characteristics were performed through two-tone and wide band code division multiple access (WCDMA) modulated excitations. The FP-HEMT exhibited an improved breakdown voltage of 160 V compared with that of the conventional HEMT. Additionally, a higher output power of 25.4 dBm with 43% power added efficiency at a 30 V drain bias at 2 GHz was achieved. When biased at 30 V and 15 mA/mm current density, the third-order intermodulation (IM3) level was measured to be -27.1 dBc (at P(1dB)) and the adjacent channel power rejection (ACPR) was -33.8 dBc (at P(1dB)) under WCDMA modulation at 2 GHz. Measurement results revealed that the field-plated structure improved the linearity performance over the conventional structure at high output power levels even beyond P(1dB). (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6276
http://dx.doi.org/10.1143/JJAP.49.014103
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.014103
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 1
顯示於類別:期刊論文


文件中的檔案:

  1. 000275607900033.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。