Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hu, Chih-Wei | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Tu, Chun-Hao | en_US |
dc.contributor.author | Chen, Yang-Dong | en_US |
dc.contributor.author | Lin, Chao-Cheng | en_US |
dc.contributor.author | Chen, Min-Chen | en_US |
dc.contributor.author | Lin, Jian-Yang | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.contributor.author | Tseng, Tseung-Yuen | en_US |
dc.date.accessioned | 2014-12-08T15:08:02Z | - |
dc.date.available | 2014-12-08T15:08:02Z | - |
dc.date.issued | 2010-01-01 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3285172 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6297 | - |
dc.description.abstract | In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO(2) about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO(3):H(2)O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO(2) film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO(2), a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO(2) layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3285172 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 157 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | H332 | en_US |
dc.citation.epage | H336 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
Appears in Collections: | Articles |