標題: | 準光學功率整合器陣列之研究 Studies of Quasi-Optical Power Combining Arrays: |
作者: | 李信宏 Lee, Shing-Horng 李建平, 周復芳 Chien-Ping Lee, Christina F. Jou 電子研究所 |
關鍵字: | 方柵振盪器;漏波;主動天線;Grid Oscillator;Leaky Wave;Active Antenna |
公開日期: | 1997 |
摘要: | 本篇論文主要是針對準光學功率整合技術作研究。在論文第一部份□ ,首先我們研究了1x1、 2x2及4x4甘式二極體所製成之方柵振盪器,這準 光學振盪器陣列的頻率可用電壓控制而並不需要用移動後鏡面來調變,另 外我們也提出了一個二維分析方法來計算電場及磁場幅射場形。這種方柵 振盪器陣列有兩個優點:一是它不需要外在鎖相訊號,二是它不 像貼片天 線陣列需要電阻來消除多模的問題。雖然我們已使用後面的接地面當作散 熱片,但是實驗結果顯示當整合更多元件時,散熱將會是一個大問題,但 是這可用脈沖式直流偏壓來消除。 在論文第二部份□,首先研究一個不對稱饋入的固定頻率主動漏波天線, 然後我們研究陣列部份,我們針對一、兩及四個使用甘式二極體所製作之 強藕合然的線性主動漏波天線陣列作研究,它們的功率輸出效率兩根的 是1.58倍,而四根的為0.75倍,它可以經由二極體的改變偏壓來調變主波 角度,這些天線陣列的實驗結果顯示出二維波束掃瞄器是指日可待的。 另外,一個使用甘式二極體的X頻帶的共平面轉槽線饋入之頻率掃描式主 動漏波天線 被成功的製造出來。這種線路提供了我們能夠製造出小,簡 單,重量輕,便宜而且是可掃描頻率的微波源。 因為共振穿隧二極體有著比任何元件都高的截止頻率,所以它是最適合作 高頻單石微波源的器件。因此我們在論文的後段研究了適合作單石積體電 路用的共振穿隧二極體。我們也使用了直接在晶片上量測及去嵌入(de- embedding) 的方法來萃取此二極體的等效高 頻參數,這個方法可適用於 任何二極元件。 The quasi-optical power-combining technique is investigated in this thesisIn part I of the thesis, the performance of 1x1, 2x2, and 4x4 varactor-tuned Gunn diodes grid oscillators has been studied. The frequency of this quasi- optical oscillator array is tunable electrically, not mechanically moving the mirror in behind. A two-dimensional analytical method is established to predict the E-H radiation pattern. The advantages of the grid oscillator arrayis its simple bias structure, and no external injection locking is needed,and no resistors is required to eliminate multimode problem like in the patch array. Although, we take the back ground plane as a heat sink, the results shows that the heating problem will occur if more devices are combined.However,this problem can be eliminated by using pulsed dc bias input. Therefore,usingpulsed bias, it can easily combine a large number of devices on the same plane In part II of the thesis, first, an asymmetrically feeding Gunn diode active leaky-wave antenna has been demonstrated in Ku band.And we demonstrated the frequency scanning capability of this active leaky wave antenna. The microstrip leaky wave active antenna array of one, two and four elements are studied. And the beam scanning phenomenon of four element Gunn diode oscillator leaky wave antenna array is measured. diode oscillator leaky wave antenna array is measured.The main beam angle could change from 36°to 48°for the Gunn VCO frequency tuned from 12.065GHz to 11.867GHz. Their result appears that two dimensional beam scanning source is amenable. Secondly, a X-band CPW- to-Slotline feeding to microstrip line leaky wave active antenna using Gunn diode oscillator is investigated. The circuits offers a possibility for completely monolithic millimeter wave circuits, which provide a small, simple, light weight, low cost, and a frequency scanning source for many applications. Resonant tunneling diodes (RTDs) are suitable devices to design for a monolithic high frequency source, because it has the highest cutoff frequency than any other devices. Therefor, in the appendix, a study of monolithic RTD device has been included. A good DC characteristic is measured. And a method to extract the high frequency RTD equivalent model has been developed including on wafer testing and de-embeding considerations. This process could be very suit for any other two terminal devices, such as Gunn diodes, IMPATT diode et al. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT860428016 http://hdl.handle.net/11536/62996 |
顯示於類別: | 畢業論文 |