使用表面黏著技術設計於上微波頻帶暨毫米波之射頻模組

Abstract

本文展示兩個以封裝的PHEMT電晶體製造之射頻模組零組件。 其中一個是震盪器，分別有兩個樣本被設計其震盪頻率於22 GHz 及25 GHz。量測的結果顯示大約較理論值低約1GHz。震盪的現象已經被證實在 上微波頻帶。同時模擬的過程及實驗結果將被展示。 另外一個是使用先進的表面黏著技術的PHEMT電晶體發展及成功地測試的 高效率、單級、13 GHz 到 22 GHz 寬頻帶放大器。增益平坦度在13 GHz 到22 GHz可以達到 2.86 dB±0.75 dB。同時以LibraTM 模擬的結果與實 際量測雙埠的散射參數能取得相當一致的結果。這兩個元件所展示的是大 量、低價的生產及短暫的折返時間在上微波頻帶積體電路是可行的。 In this thesis, two important components within the RF modules incorporating packaged PHEMT will be presented. One is oscillator. Two samples are designed to meet oscillation conditions at 22 GHz and 25 GHz, respectively. The measured results are approximate offset lower 1 GHz from theoretical calculations. The phenomenon of oscillation has been verified upper microwave band. Both simulation procedures and measured results are presented. The other is a high-performance, single-stage, 13-to-22 GHz broadband amplifier that has been developed and tested successfully employing the advanced SMT PHEMT. Gain flatness of 2.86 dB±0.75 dB between 13 GHz and 22 GHz is achieved. Both simulated results based on LibraTM and measured two-port scattering parameters of the amplifier agree excellently. Two components are demonstrating that large volume, low cost production and short turn around time of upper-microwave- frequency integrated circuits are feasible.