具方向性晶種成長AgGaS2 AgGa2 和 AgGa(S0.1Se0.9)2單晶

Abstract

本研究是以垂直布氏長晶法來成長AgGaS2 AgGa(S1-xSex)2這幾顆晶體並對晶體來做其電性及物性分析EPMA Raman X-ray PL FTIR DTA 來分析AgGaS2 AgGa(S1-xSex)2 這些紅外線非線性晶體。晶體成長的過程中，藉著長晶的速率改變，來克服晶體的脆裂。並且在這些四元成分生長的晶體中，我們得到其能隙變化有線性關係，及在C、A軸有線性關係。AgGaS2 、AgGaSe2、AgGa(S0.1Se.9)2晶體在紅外光譜中通光範圍分別為0.48-14um、及0.705-19.45um、0.679-19.275um。AgGa(S0.1Se.9)2在拉曼光譜原子在晶體中振動模式類似AgGaSe2。

In this study, AgGaS2 AgGaSe2 and AgGa(S0.1Se.9)2 single crystal were growth by Vertical Bridgman method. By changing the growth rate,we can decreased the crack occured in the crystals. Using X-ray PL,FTIR,DTA Raman spectrum, EPMA these measurements, we find these crystals' electrical and optical properties. The linear relationship was found between the bandgap and lattice constant of axis a and c within these crystals. From FTIR meansurement, we obtain transmission range of these crystals AgGaS2 AgGaSe2 and AgGa(S0.1Se.0.9)2:0.48-14um 0.705-19.45um 0.679-19.275u m respectively. As for Raman shift, cruystal of AgGa(S0.1Se0.9)2 shows the result simlar to those of the AgGaSe2 .