标题: 铂闸极结构化钻石场发射阵列之制作与特性研究
Fabrication and Characterization of Diamond Field Emitter Arrays with a Pt Gated Structure
作者: 王洪昌
Wang, Hung-Chang
陈家富
Chen, Chia-Fu
材料科学与工程学系
关键字: 真空微电子技术;钻石
公开日期: 1997
摘要: 真空微电子技术应用在半导体用重要的电子元件,特别是场效平面显示器,已引起许多研究者广泛的注意。组成场效平面显示器用的场发射阵列元件是由无数个可发射电子的场发射单元(FEC)配列所组成的pixel 依阵列方式规则排列而成。
利用高电场在FEC之尖端发射电子,而影响整个发射场功率的因素,包括发射材料之外型及其功函数、尖端与闸极间之距离或影响功函数的真空环境。然而钻石的(111)面具有负的电子亲和力或非常小的电子亲和力特性,使得钻石成为最具潜力之固态电子元件的发射器材料。
在本实验中,我们结合制作金属/绝缘体/半导体(MIS)结构元件之IC制程技术及成长钻石膜之偏压辅助微波电桨化学气相沈积技术,成功的制作出圆锥形钻石场发射阵列元件。以铂金属层作为闸极,ITO玻璃为阳极,矽基材为阴极,闸极与阴极间以二气化矽作为绝缘层,阳极与闸极间距离为10mm,形成一个三极场发射阵列元件。将此元件放入1×10-6Torr的高真空中,阴极上外加一高电压1000V,闸极的电压由0逐渐增加至50V,可求得场发射电流。结果显示,场发射元件闸极之起始电压约为12V,当闸极电压增加至30V时,场发射电流约为40uA。同同时由F-N函数的线性关系亦可得知,此种钻石阵列元件之电子场发射的起始电压及其功函数等特性。
另外,我们也探讨金中间层对化学气相沈积钻石薄膜之电子场发射的影响。实验结果显示,有镀金之矽基材上沈积的钻石膜之场发射电流密度为528uA/cm2,而无镀金的场发射电流密度为32uA/cm2。因此,可以证实镀金中间层的存在可有效的改善钻石薄膜之场发射电流。
Vacuum-microelectronic technology has found extensive applications in semiconducting electric devices, particularly in field emission display (FED). Such FED applications are arranged from several "pixels", which are associated with several field emission cells (FECs), in the array order.
Applying a high electric field on the field emitter array emits electrons from the tip of field emitter array (FEA). The characteristics that affect the power of field emitter arrays, include the shape and work function of emission materials, the distance between tip and gate, and the vacuum environmental condition. However, (111) plane of diamond has a negative or very samll electron affinity. Therefore as widely recognized, the diamond is the promising material for use in manufacturing a solid-state electron emitter.
In this experiment, we successfully fabricate cone- shaped diamond field emitter array devices by using two technologies. A metal - insulator-semiconductor (MIS) diode structure is initially made by applying IC process. Diamond film is then deposited on the field emitter array devices by using bias assisted microwave plasma chemical vapor deposition (BAMPCVD).
Herein, Pt layer is used as the gate, ITO glass as the anode, the silicon substrate as the cathode, the SiO2 layer as the insulator between gate and cathode, form a triode field emission array device. The distance between the gate and anode is about 10 mm, and it is placed in the 1×10-6 Torr vacuum chamber. The field emission current is measured when applying +1000V voltage on the anode in which the applied gate voltage is varied from 0 to 50 volts. According to our results, the threshold voltage of this device is about 12 V and the field emission current is about 40 ua when the gate voltage is 30 V. The electron field emission characteristics of the diamond field emitter array devices that are threshold voltage and work function et.al. from Fowler-Nordheim plot with a linear relationship.
Moreover, this study investigates the electron field emission properties. ALSo examined herein is how Au intermediate layer influences the electron field emission characteristics of CVD diamond films. Results presented herein demonstrate that the diamond film on the Si substrate with Auprecoating that filed emission current density is 528 ua/cm2, but without Au-precoating is 32 uA/cm2. So, the existence of Au-precoating intermediate layer can improve the electron field emission properties of diamond films.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT863159007
http://hdl.handle.net/11536/63380
显示于类别:Thesis