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dc.contributor.author陳淵士en_US
dc.contributor.author陳振芳en_US
dc.contributor.authorChen, Jann-Fangen_US
dc.date.accessioned2014-12-12T02:19:28Z-
dc.date.available2014-12-12T02:19:28Z-
dc.date.issued1997en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT863429004en_US
dc.identifier.urihttp://hdl.handle.net/11536/63421-
dc.description.abstract三五族化合物半導體在光電元件與電子元件的應用上,具有極重要的地位,但是由於大多數化合物半導體的晶格常數都不太相同,所以早期想要成長晶格常數不一樣的異質接面是很困難的。而由於磊晶技術的進步以及對晶格不匹配系統的研究成果,使我們能利用應變(strain)來成長晶格不匹配的異質接面。但是因為系統會趨向最小能量狀態,所以有臨界厚度的限制。當磊晶厚度超過臨界厚度時,將產生差排(dislocation),這將會降低元件品質。 為了保証元件品質良好,我們必須確定元件的磊晶厚度小於臨界厚度,因此我們有必要去了解各種晶格不匹配系統的臨界厚度。所以需要一個方便又準確的方法來偵測臨界厚度。 由於dislocation會對樣品結構中載子分佈產生影響,也會改變晶格常數,所以我們用C-V量測、反向I-V量測、順向I-V量測以及X-ray rocking curve等方法來偵測GaAs\In0.2Ga0.8As\GaAs單一量子井的臨界厚度。 我們發現使用X-ray rocking curve有許多方法可以偵測臨界厚度,除了常用的觀察InGaAs與GaAs peak的相對位置之外,還可以由界面干涉的存在與否,以及capping layer的strain變化來觀測臨界厚度。由X-ray rocking curve明顯的量測結果,使我們可確定GaAs\In0.2Gao.8As\GaAs系統的臨界厚度為200~3OOA。 由C-V量測得知當In0.2Ga0.8As厚度從200A增加到30nA時,載子分佈的情形產生劇烈的變化。也就是說磊晶厚度是否超過臨界厚度,會對載子分佈產生相當明顯的影響。所以C-V量測是一種適合用來偵測臨界厚度的量測工具。zh_TW
dc.description.abstractThe transition of carrier distribution from the strained to the relaxed state in Ino0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There are two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well thickness less than the critical thickness. When well thickness increases beyond the critical thickness, a significant carrier depletion around the quantum well is observed. Double crystal X-ray rocking curves show that when InGaAs well thickness increases beyond the critical thickness, interference pattern disappears and relaxation begins to occur from near the bottom InGaAs/GaAs interface while the top interface while the top interface still remains strained. The result of the critical thickness determined from X-ray diffraction corresponds to the transition of carrier distribution, illustrating that the capacitance-voltage technique is a very sensitive technique for determination of the critical thickness.en_US
dc.language.isozh_TWen_US
dc.subject單一量子井zh_TW
dc.subject晶格應變zh_TW
dc.title晶格應變對單子量子井結構中載子分佈的影響zh_TW
dc.titleEffects of Stain Relaxtion on Carrier Confinement and Depletion in InGaAs/GaAs Quantum Wellen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
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