以亞胺基鉭錯合物經化學氣相沈積氮化鉭薄膜

Abstract

本研究是以Ta(=NR)CI3Py2(R=tBu,iPr)與LiNEtMe反應，生成具有揮發之黃色液體，此黃色液體經由NMR、MS及EA鑑定得知為Ta(=NR)(NEtMe)3。並以此化合物為單源前驅物藉由低壓化學氣相沉積法（LPCVD）成長薄膜。當沈積溫度介於623-923K時可得到一具有結晶性之氮化鉭薄膜。 首先利用掃瞄式電子顯微鏡觀察此薄膜的形態（morphology），隨後再經由X光繞射儀 （XRD）、波長分散光譜儀（WDS）及電子能譜儀（ESCA）綜合得知此薄膜為立方堆積的含碳之氮化鉭薄膜（TaNCx０），另外在化學氣相沈積中所產生的揮發性產物，則利用NMR、IR GC-MS及線上連接on-line的RGA分析之，並探討膜組成與揮發性產物間的關係。

The imido comlexes, Ta(=NR)(NEtMe)3 (R=tBu, iPr), were successfully synthesized from Ta(=NR)CI3Py2 with LiNEtMe in toluene. The complexes were characterized by NMR spectroscopy, mass spectroscopy, and elemental analysis. The cubic tantalum nitride thin films were deposited by low-pressure chemical vapor deposition (LPCVD) between 623-923 K by using tertbutyl-imidotris(ethylmethylamido)tantalum, Ta(=NtBu)(NEtMe)3, and isopropylimido-tris(ethylmethylamido)tantalum, Ta(=NiPr)(NEtMe)3, as single source precurses. The films were characterized by scanning electron microscopy (SEM), X-ray diffraction(XRD), wavelength dispersive spectrometer (WDS), and Electron Spectroscopy for Chemical Analysis (ESCA). Volatile products were identified by NMR, IR, GC-MS, and on-line residue gas analysis (RGA). The relationship between elemental contents of the thin films and the volatile products is discussed.