標題: 硒化鋅及其三元,四元化合物之光學性質研究
Studies on the optical properties of ZnSe based ternary and quaternary compounds
作者: 江寶焜
Jiang, Bao-Kun
褚德三
Chu, De-San
電子物理系所
關鍵字: 光激螢光譜;拉曼光譜;硒化錳鋅磊晶;半導體能階;量子井;緩衝層;光學特性;反射光譜;硒化鋅;應變效應;電子物理;電子工程;photoluminescence spectroscopy;Raman spectroscopy;ZnMnSe epilayer;energy gap;quantum well;buffer layer;Optical characteristics;Photoluminescence (PL);Reflection spectroscopy;ZnSe;Stress effect;ELECTROPHYSICS;ELECTRONIC-ENGINEERING
公開日期: 1997
摘要: The optical properties of ZnSe based ternary and
quaternarycompounds were invertigated by using photoluminescence
(PL), reflection,and Raman spectroscopy methods. Two of ZnSe
based compounds, ZnMnSeepilayers which were grown on GaAs (100)
by molecular beam epitaxy (MBE)technique and ZnMnSe thin films
which were grown on thin glasses byradio frequency (RF)
sputtering techniuqe, were studied. Photoluminescenceand
reflection measurements manifest that the energy gap
increasinglinearly with Mn concentration x. Raman scattering
spectroscopy of ZnMnSeepilayers and ZnMnSe thin films exhibits
mixed-mode behaviors. PL and Raman spectra manifest the stress
effect due to lattice mismatch wasreleased for the films with
thickness larger than 1000 A. The crystalqualities can be
justified by comparing the symmetry and intensity ofthe LO
phonon peaks. Temperature dependence of photoluminescence
spectroscopy of ZnCdSe/ZnSe based multi-quantum-well structure
epilayers was also investigated. The luminescence efficiency was
found to be improvedby using a wider band-gap quaternary alloy
ZnMgSSe as buffer layers.The luminescence efficiency can be also
improved by increasing the layers of quantum wells. The
mechanism of the enhancement of the luminescence intensities for
the above mentioned methods might be very different. A
three-parameter simple equation was used to fit thetemperature
dependence of ZnMnSe and ZnTe epilayer semiconductorband gaps.
Our formula is justified both in practical and theoretical
grounds. This is because our formula is shown to be compatible
with reasonable assumptions for the influence of phonons on the
band-gapenergy. In addition to this, the fitting result is
numberically betterthan that obtained by using the widely
quoted-Varshni equation.Besides, we also intorduce the evolution
of fitting energy equations and justify its validation.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT864429002
http://hdl.handle.net/11536/63639
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