| 標題: | 分子束磊晶低溫成長砷化鎵電性量測分析 = The electrical characteristics of annealed molecular beam epitaxial GaAs grown at low temperatures |
| 作者: | 陳乃權 陳振芳 電子物理系所 |
| 公開日期: | 1997 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT866429001 http://hdl.handle.net/11536/63673 |
| 顯示於類別： | 畢業論文 |
- 分子束磊晶成長低溫砷化鎵與相關化合物半導體及其元件應用 / 鄭子銘;Tzyy-Ming Cheng;張俊彥;Chun-Yen Chang
- Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs / Chen, NC;Wang, PY;Chen, JF
- HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY / CHENG, TM;CHANG, CY;CHANG, TC;HUANG, JH;HUANG, MF
- Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy / Hsieh, LZ;Huang, JH;Su, ZA;Wu, MC
- STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY / CHENG, TM;CHIN, A;CHANG, CY;HUANG, MF;HSIEH, KY
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