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dc.contributor.authorSekine, Nobuyukien_US
dc.contributor.authorChou, Cheng-Hsuanen_US
dc.contributor.authorKwan, Wei Leken_US
dc.contributor.authorYang, Yangen_US
dc.date.accessioned2014-12-08T15:08:09Z-
dc.date.available2014-12-08T15:08:09Z-
dc.date.issued2009-12-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2009.08.011en_US
dc.identifier.urihttp://hdl.handle.net/11536/6367-
dc.description.abstractWe report a unique nano-ridge structure of zinc oxide (ZnO) and its application in high performance inverted polymer solar cells. The ZnO nano-ridge structure was formed by a sol-gel process using a ramp annealing method. As the solvent slowly evaporated due to the low heating rate, there was sufficient time for the gel particles to structurally relax and pile up, resulting in a dense and undulated film. Nano-ridges with peak as high as 120 nm and valley to valley distance of about 500 nm were formed. This film provided an effective hole blocking layer and also an increased interfacial area for electron collection. An inverted bulk heterojunction polymer solar cell was fabricated using the ZnO nano-ridge film as the electron collecting layer. The device showed a high power conversion efficiency of 4.00%, an improvement of about 25% over similar solar cells made with a planar film of ZnO nanoparticles. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPolymer solar cellen_US
dc.subjectInverted polymer solar cellen_US
dc.subjectZinc oxideen_US
dc.subjectNano-ridgeen_US
dc.titleZnO nano-ridge structure and its application in inverted polymer solar cellen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2009.08.011en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume10en_US
dc.citation.issue8en_US
dc.citation.spage1473en_US
dc.citation.epage1477en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000272605200009-
dc.citation.woscount101-
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