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dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorMeng, Chinchunen_US
dc.date.accessioned2014-12-08T15:08:13Z-
dc.date.available2014-12-08T15:08:13Z-
dc.date.issued2009-12-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2009.2033522en_US
dc.identifier.urihttp://hdl.handle.net/11536/6399-
dc.description.abstractA 15-GHz high-isolation sub-harmonic mixer (SHM) with delay compensation is demonstrated in this letter using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. The proposed SHM consisting of two parallel stacked-LO mixer cores with opposite LO I/Q inputs substantially improves port-to-port isolation. A mathematical analysis regarding the isolation properties is also included in this letter. Further, a conventional stacked-LO SHM (w/o compensation) is also implemented with the same device sizes and bias conditions for a fair comparison. SHMs w/ and w/o compensation have similar conversion gain of 9/10 dB and noise figure of 14/13.5 dB when f(LO) = 7.5 GHz. However, the delay compensation technique improves the 2LO-RF/IF isolation by 34/35 dB, the LO-RF/IF isolation by 8/9 dB, and the RF-IF isolation by 22 dB.en_US
dc.language.isoen_USen_US
dc.subjectHeterojunction bipolar transistor (HBT)en_US
dc.subjectMarchand balunen_US
dc.subjectpolyphase filteren_US
dc.subjectSiGeen_US
dc.subjectsub-harmonic mixer (SHM)en_US
dc.title15 GHz High-Isolation Sub-Harmonic Mixer With Delay Compensationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2009.2033522en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume19en_US
dc.citation.issue12en_US
dc.citation.spage810en_US
dc.citation.epage812en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000272320700017-
dc.citation.woscount0-
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