標題: | Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio |
作者: | Chao, Yu-Chiang Lin, Yi-Cheng Dai, Min-Zhi Zan, Hsiao-Wen Meng, Hsin-Fei 物理研究所 光電工程學系 Institute of Physics Department of Photonics |
關鍵字: | ageing;organic semiconductors;plasma materials processing;polymers;transistors |
公開日期: | 16-十一月-2009 |
摘要: | Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 10(4) is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor. |
URI: | http://dx.doi.org/10.1063/1.3261749 http://hdl.handle.net/11536/6418 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3261749 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 95 |
Issue: | 20 |
結束頁: | |
顯示於類別: | 期刊論文 |