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dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorLin, Yi-Chengen_US
dc.contributor.authorDai, Min-Zhien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2014-12-08T15:08:14Z-
dc.date.available2014-12-08T15:08:14Z-
dc.date.issued2009-11-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3261749en_US
dc.identifier.urihttp://hdl.handle.net/11536/6418-
dc.description.abstractVertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 10(4) is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.en_US
dc.language.isoen_USen_US
dc.subjectageingen_US
dc.subjectorganic semiconductorsen_US
dc.subjectplasma materials processingen_US
dc.subjectpolymersen_US
dc.subjecttransistorsen_US
dc.titleReduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratioen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3261749en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume95en_US
dc.citation.issue20en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000272052200065-
dc.citation.woscount13-
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