錳鎳銅薄膜電阻的製備和性質

Abstract

在氧化鋁或者矽基板上以反應式射頻磁控濺鍍成長錳鎳銅薄膜，探討製程參數包括有基板溫度、濺鍍時間、濺鍍的功率、回火時間及溫度等對錳鎳銅薄膜電阻微結構的影響，並且以X光繞射分析成長溫度對錳鎳銅薄膜結構的影響 ;以原子力學顯微鏡觀測成長溫度對薄膜表面結構的變化等。 藉由濺鍍時間、基板溫度、功率大小、回火溫度以及回火時間的適當控制，我們可以獲得低片狀阻值(0.4 W/square)及低阻值溫度係數(208 ppm/oC)的薄膜電阻。

Effect of processing variables include deposition time, substrate temperature, power, annealing temperature, annealing time on the properties of manganin thin films deposited on Al2O3 substrate or Si wafer using reactive r.f. magnetron sputtering system. We analyzed the influences of those variables on the microstructure of manganin thin film based on the X-ray diffraction data. The dependence of grain size and surface morphology of the film on deposition temperature can also be observed by atomic force microscopy. By precisely controlling the variables stated above, manganin thin film resistors with the low sheet resistance of 0.4 W/square and TCR of 208 ppm/oC were successfully fabricated.