寬頻帶量子井紅外線偵測器

Abstract

在本篇論文中，研究了8-10μm量子井紅外線偵測器(QWIP)內容包括基本理論之介紹、製程技術與量測之說明、位障摻雜之量子井紅外線偵測器、以及最後的寬頻帶量子井紅外線偵測器之研究。在位障摻雜紅外線偵測器方面，我們對於位障摻雜之濃度、位置對於吸收頻譜之影響做了一番研究。除此之外對於位障摻雜與暗電流亦有一些基本之結論。由實驗結果得知，位障摻雜之濃度愈高對於吸收頻譜將更往長波長調變，但是伴隨而來的將是暗電流的增加，Al0.24GaAs/GaAs 450A/55A(10 layers) 位障摻雜之濃度分別為1.95e12cm-2、9.7e11cm-2其最大吸收之波長分別為10μm、9.8μm，而在偏壓為1V時其暗電流分別為1e-3、8e-4A，故必須對定量之位障摻雜濃度做最妥善之運用，其方法乃是採取δ-doping。由實驗得知對於Al0.24GaAs/GaAs 450A/55A(10 layers) 位障摻雜之位置分別為置於位障中央之δ-doping與分布於範圍為位障中間50 A之位置，摻雜濃度為1.95e12cm-2，其吸收波長分別為10μm與9μm，而δ-doping之暗電流亦減少一倍之多。這是利用位障摻雜對吸收之波長調變得一些基本結論。最後對於位障摻雜對吸收頻譜之調變做一應用，組合後則可得到寬頻吸收之紅外線偵測器。

In this thesis, I have some research for 8-10μm QWIPs, It contains the introduction for basic theory , processing techniques, measurement, barrier doped QWIPs and broad band QWIPs. About barrier doped QWIPs, I have some research for the influence of doping concentration and doping region for absorption. Besides, I also have some conclusion for dark current. In the experiment , we get the higher doping concentration ,the longer wavelength absorption, therefore, the more dark current follows. The devices Al0.24GaAs/GaAs 450A/55A (10 layers) doping concentration 1.95e12cm-2 and 9.7e11cm-2,we can get their absorption wavelength are 10μm and 9.8μm.If the devices are under 1 volts bias, we can have their dark current are 1e-3 and 8e-4 A, so we have to take the best advantage for the dopant.the best way is to apply delta doping. Al0.24GaAs/GaAs 450A/55A (10 layers) for the different doping region-one is delta doping and the other is in the middle 50A of barrier , doping concentration 1.95e12cm-2 , we get that the absorption wavelength is 10μm and 9μm,and the dark current for delta doping is half the other. At last, applying the conclusion ,we get broad band QWIPs.