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dc.contributor.authorHsieh, Ming-Fengen_US
dc.contributor.authorLin, Deng-Sungen_US
dc.contributor.authorGawronski, Heikoen_US
dc.contributor.authorMorgenstern, Karinaen_US
dc.date.accessioned2014-12-08T15:08:16Z-
dc.date.available2014-12-08T15:08:16Z-
dc.date.issued2009-11-07en_US
dc.identifier.issn0021-9606en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3258849en_US
dc.identifier.urihttp://hdl.handle.net/11536/6438-
dc.description.abstractRandom pairing simulation and low temperature scanning tunneling microscopy (STM) are used to investigate the detailed O(2) dissociative adsorption processes at 200 K for various coverages. The distribution of oxygen adatoms shows a strong repulsion between the adsorbates with a radius of similar to 0.8 nm. The comparison between STM results and simulation reveals two prominent pairing distances of 2 and 4 nm and their branching ratio is about 2:1. These findings shed new light on the origin of the large intrapair distances found and on the process behind the empirical "eight-site rule.".en_US
dc.language.isoen_USen_US
dc.subjectadsorbed layersen_US
dc.subjectadsorptionen_US
dc.subjectdissociationen_US
dc.subjectoxygenen_US
dc.subjectscanning tunnelling microscopyen_US
dc.subjectsilveren_US
dc.titleHard repulsive barrier in hot adatom motion during dissociative adsorption of oxygen on Ag(100)en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3258849en_US
dc.identifier.journalJOURNAL OF CHEMICAL PHYSICSen_US
dc.citation.volume131en_US
dc.citation.issue17en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000271664500052-
dc.citation.woscount3-
Appears in Collections:Articles


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