超薄氧化層C-V特性之透納成分

Abstract

由於元件尺寸縮小的趨勢,氧化層的厚度也一直地在縮小. 這直接導致透納電流的產生, 進而影響超薄氧化層CV特性的量測. 本論文主要目的是討論透納電流對量測超薄氧化層CV的影響. 本研究中也考慮了金氧半電容中反轉層的量子效應. 金氧半電容的各項參數藉由波松方程式併入量子效應得到. 其誤差也將在論文中給予討論

Due to the miniaturization of devices, the thickness of gate oxide in MOSFET is also scaling down. This directly results in the generation of tunneling current, which in turn affects quasistatic CV measurement. Study of the influence of tunneling current on quasistatic CV measurement of ultra thin oxide is the main purpose in our thesis. Quantum effect in MOS inversion layer is also taken into consideration in our work. Parameters of MOS capacitor are extracted by solving Poisson's equation coupled with quantum model. Error of extraction will be discussed as well.