標題: Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy
作者: Wang, J. S.
Yang, C. S.
Chen, P. I.
Su, C. F.
Chen, W. J.
Chiu, K. C.
Chou, W. C.
電子物理學系
Department of Electrophysics
公開日期: 1-Nov-2009
摘要: This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/A mu m with a field enhancement factor beta of around 793.
URI: http://dx.doi.org/10.1007/s00339-009-5436-3
http://hdl.handle.net/11536/6449
ISSN: 0947-8396
DOI: 10.1007/s00339-009-5436-3
期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume: 97
Issue: 3
起始頁: 553
結束頁: 557
Appears in Collections:Articles


Files in This Item:

  1. 000271480300007.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.