Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region

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DC 欄位	值	語言
dc.contributor.author	Wu, Yu-Sheng	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2014-12-08T15:08:20Z	-
dc.date.available	2014-12-08T15:08:20Z	-
dc.date.issued	2009-11-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TED.2009.2030714	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6471	-
dc.description.abstract	This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.	en_US
dc.language.iso	en_US	en_US
dc.subject	Gate-all-around (GAA)	en_US
dc.subject	MOSFET	en_US
dc.subject	quantum effects	en_US
dc.subject	short-channel effect	en_US
dc.title	Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TED.2009.2030714	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	56	en_US
dc.citation.issue	11	en_US
dc.citation.spage	2720	en_US
dc.citation.epage	2725	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000271019500044	-
dc.citation.woscount	14	-
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