摻磷的三極鑽石場發射電性研究

Abstract

本論文中，我們成功的利用IC製程技術完成4μm（場發射單元孔徑）的金屬/絕緣體/半導體(MIS)結構元件。再利用成長鑽石膜之偏壓輔助微波電漿化學氣相沈積技術成功的製作出樹枝狀的鑽石場發射陣列元件。沈積後的鑽石以掃瞄式電子顯微鏡(SEM)、拉曼(Raman)光譜儀、二次離子偵測器(SIMS)來觀察與分析其表面型態的不同與分析其鑽石品質。 而為了更有效的提高場發射電流，我們嘗試以硼酸三甲酯(B(OCH3)3）與磷酸三甲酯(P(OCH3)3)為摻雜源來增加鑽石場發射陣列的電子特性。經電性測試結果顯示，摻雜磷或硼的鑽石場發射電流都比未摻雜的鑽石大。

In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode by IC technology. First, we used a bias assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and N-doped semiconductors. Then, we deposited the diamond emitters in this MIS diode gated field emission arrays (FEAs). Finally, we use scanning electron microscopy (SEM) to characterize their morphology; secondary ion mass spectrometry (SIMS) to determine the content of the dopant source; micro-raman spectroscopy to identify the quality of two different diamond emitters; and I-V measuring system to obtain their electrical characterization.. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B or P doping. At the same time, the quality of diamond emitters declined with the incorporation of phosphorus or boron. Moreover we compare the P-doping and B-doping concentrations and its influence on emission properties. It is demonstrated that the turn-on voltage of electron emission decreases with increasing doping level. On the other hand, the field emission of B-doped and P-doped are twenty and eighty times higher than that of non-doped diamond emitters. Next, the gate aperture diameter significantly affects the electron field emission characteristics. We have successfully fabricated 4μm-pattern device to enhance emission current density for a given voltage. The details of result will be presented at conference.