添加Al3+或Y3+離子對鉺參雜氧化矽或氧化鈦材料的螢光特性與結構之影響

Abstract

鉺參雜平面光波導放大器是光纖通訊中極為重要的元件，為了因應其小體積、高效率的要求，提高其中的鉺離子參雜量是必須的。由於高的鉺離子參雜量勢必會遇到鉺離子形成聚集的問題，所以避免聚集的形成成為首要考量，而其他離子(如Al3+離子、P3+離子、Yb3+離子)的添加是十分有效的解決方法之一。本實驗將Al3+離子及Y3+離子添加在鉺離子參雜的氧化矽或氧化鈦基材中，並對不同添加量與熱處理溫度的影響及其機制加以研究。實驗結果顯示Al3+離子及Y3+離子的添加均對螢光強度的提昇有良好的效果，Y3+離子添加的效應尤其顯著。我們將Al3+離子的效果歸功於其會創造出較多的non-bridging oxygens，而Y3+離子的效果則是因ErxY2-xO3或Y2-xErxSi2O7微晶的形成。另外由Al3+離子添加在鉺參雜二氧化鈦中的結果，我們認為Al3+離子與Er3+離子的添加有幫助Anatase相轉變成Rutile相的效應

Erbium-doped planar waveguide amplifier is a very important device in optics-communication systems. Increasing doping levels of Er3+ ions is necessary for the development of minifarized volume and high efficiency. Since Er3+ ions will form clusters as increasing doping levels of Er3+ ions, annihilation of clusters is the primary focus of this research. In this experiment, Al3+ ions and Y3+ ions were used on Er3+-co-doped silica/titania materials. The influences of doping levels and heat treatment temperatures on the phase evolution and photoluminescence properties of Al3+/Y3+-Er3+ co-doped silica/tiania would be investigated. Results showed that the co-doping of either Al3+ ions or Y3+ ions would increase intensities of fluorescence but the latter would perform better. The effects of Al3+ ions on the photoluminescence were attributed to the creations of non-bridging oxygens(NNOs). Meanwhile, it was found that the formations of ErxY2-xO3 or Y2-xErxSi2O7 also would inhibit the formations of clusters. In addition, the Al3+-doping in titania would enhance the transformation of Anatase phase to Rutile phase.