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dc.contributor.authorLo, Tien-Yuen_US
dc.contributor.authorHung, Chung-Chihen_US
dc.date.accessioned2014-12-08T15:08:30Z-
dc.date.available2014-12-08T15:08:30Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0786-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/6556-
dc.description.abstractA CMOS transconductor for multi-mode mobile channel selection filter is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors and the circuit features high linearity over a wide input swing range. The current multiplier which operates in the weak inversion region provides a wide transconductance tuning range without degrading the linearity. A third-order Butterworth low-pass filter implemented with the transconductors was designed by TSMC 0.18-mu m CMOS process. The measurement results show that the filter can operate with the cutoff frequency of 135 kHz to 2.2 MHz. The tuning range and the linearity performance would be suitable for the wireless specifications of GSM, Bluetooth cdma2000, and Wideband CDMA. In the design, the maximum power consumption at the highest cutoff frequency is 2 mW under a 1-V supply voltage.en_US
dc.language.isoen_USen_US
dc.titleLow-voltage multi-mode Gm-C channel selection filter for mobile applicationsen_US
dc.typeArticleen_US
dc.identifier.journalPROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCEen_US
dc.citation.spage635en_US
dc.citation.epage638en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000252233200144-
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