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dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorTseng, Yuan-Chiehen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorHsu, Ming-Chiehen_US
dc.contributor.authorChao, Tzu-Yzanen_US
dc.contributor.authorCheng, Yu-Tingen_US
dc.date.accessioned2014-12-08T15:08:32Z-
dc.date.available2014-12-08T15:08:32Z-
dc.date.issued2009-10-14en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/41/415703en_US
dc.identifier.urihttp://hdl.handle.net/11536/6566-
dc.description.abstractThe microstructures and magnetic properties of nickel nanorods fabricated using an anodic alumina oxide template and electroless deposition were investigated. The as-deposited nanorods were found to contain nanocrystalline grains with an average size of similar to 2-3 nm. The temperature-dependent magnetic hysteresis curves indicated superparamagnetic behavior of the as-deposited rods as a result of the reduction of ferromagnetic crystallites. The superparamagnetic (SM) Ni nanorods transformed into ferromagnetic (FM) ones when annealed at 400 degrees C. Results from dark-field transmission electron microscopy reveal that the microstructure of the rods tends to form a laminar structure with grain growth parallel to the long axis of the rods, together with the enhancement of ferromagnetic ordering along the same direction. The results suggest that the SM-FM phase transition obtained is microstructure driven. The Ni nanorods manufactured by the electroless deposition also have the potential to serve as magnetic building blocks in nanoscale devices, such as high-frequency inductors. On-chip magnetic spiral inductors were fabricated using these nanorods, and it was demonstrated that the nanorods can enhance inductance up to 6 GHz.en_US
dc.language.isoen_USen_US
dc.titleSuperparamagnetic and ferromagnetic Ni nanorod arrays fabricated on Si substrates using electroless depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/20/41/415703en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue41en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000269930100026-
dc.citation.woscount14-
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