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dc.contributor.authorCheng, Wei-Yunen_US
dc.contributor.authorChen, Wei-Taen_US
dc.contributor.authorHsu, Yung-Jungen_US
dc.contributor.authorLu, Shih-Yuanen_US
dc.date.accessioned2014-12-08T15:08:33Z-
dc.date.available2014-12-08T15:08:33Z-
dc.date.issued2009-10-08en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp905519een_US
dc.identifier.urihttp://hdl.handle.net/11536/6571-
dc.description.abstractWe demonstrate the feasibility of modulating and improving the separation of photoinduced charge carriers of CdS-M nanoheterostructures through partial replacement of S with two group 16 elements of larger atomic size, Se and Te. With the incorporation of Se or Te into the US nanowires (NWs), the defect states of the US NWs were effectively passivated, enabling a fuller extent of participation of the photoinduced electrons in the charge separation process, thus resulting in a more pronounced photoluminescence quenching and photocurrent depression for the CdS(1-x)Se(x) and CdS(1-x)Te(x) NWs. The present study provides a facile way of improving the photocatalytic efficiency of US through the improvement in retarding the recombination of photoinduced charge carriers.en_US
dc.language.isoen_USen_US
dc.titleModulation and Improvement on Separation of Photoinduced Charge Carriers in CdS-Metal Nanoheterostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp905519een_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume113en_US
dc.citation.issue40en_US
dc.citation.spage17342en_US
dc.citation.epage17346en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000270362100011-
dc.citation.woscount8-
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