完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Wei-Yun | en_US |
dc.contributor.author | Chen, Wei-Ta | en_US |
dc.contributor.author | Hsu, Yung-Jung | en_US |
dc.contributor.author | Lu, Shih-Yuan | en_US |
dc.date.accessioned | 2014-12-08T15:08:33Z | - |
dc.date.available | 2014-12-08T15:08:33Z | - |
dc.date.issued | 2009-10-08 | en_US |
dc.identifier.issn | 1932-7447 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/jp905519e | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6571 | - |
dc.description.abstract | We demonstrate the feasibility of modulating and improving the separation of photoinduced charge carriers of CdS-M nanoheterostructures through partial replacement of S with two group 16 elements of larger atomic size, Se and Te. With the incorporation of Se or Te into the US nanowires (NWs), the defect states of the US NWs were effectively passivated, enabling a fuller extent of participation of the photoinduced electrons in the charge separation process, thus resulting in a more pronounced photoluminescence quenching and photocurrent depression for the CdS(1-x)Se(x) and CdS(1-x)Te(x) NWs. The present study provides a facile way of improving the photocatalytic efficiency of US through the improvement in retarding the recombination of photoinduced charge carriers. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Modulation and Improvement on Separation of Photoinduced Charge Carriers in CdS-Metal Nanoheterostructures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/jp905519e | en_US |
dc.identifier.journal | JOURNAL OF PHYSICAL CHEMISTRY C | en_US |
dc.citation.volume | 113 | en_US |
dc.citation.issue | 40 | en_US |
dc.citation.spage | 17342 | en_US |
dc.citation.epage | 17346 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000270362100011 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |