Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 楊仁盛 | en_US |
dc.contributor.author | Jen-Sheng Yang | en_US |
dc.contributor.author | 李建平 | en_US |
dc.contributor.author | Chien-Ping Lee | en_US |
dc.date.accessioned | 2014-12-12T02:23:15Z | - |
dc.date.available | 2014-12-12T02:23:15Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT009211503 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/65746 | - |
dc.description.abstract | 本實驗以InAs/GaAs材料做成自聚性的量子點,形成量子點雷射的主動層。在雷射製程方面我們利用氧化的方式,將高Al含量的上覆蓋層(cladding layer)氧化,形成脊狀結構(ridge structure )雷射,其同時具有電流侷限與光侷限的功能,而在製程上其自我對準的特性(self-align),具有簡化製程步驟的優點。 □ 實驗中,我們對不同的雷射樣品做量測,均觀察到基態(ground state,GS)與激發態(excited state,ES)同時雷射的現象,並且觀察到基態與激發態的臨界電流比值IthES/IthGS對共振腔長度(cavity length)與溫度的相依性,另外我們也估算得樣品lm4354與lm4378的intrinsic relaxation time 分別為τ0 ~ 40ps 與4ps ,其中lm4354雷射樣品具有極低的透明電流密度Jtr~6A/cm2(per layer),追平目前已知文獻上所記載的紀錄[1]。 另外我們也觀察到ES波峰先出現,電流持續增加,GS波峰隨後才出現的情形,這與一般觀察到的波峰出現順序有所不同,我們也針對此現象作定性的解釋。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 量子點 | zh_TW |
dc.subject | 雷射 | zh_TW |
dc.subject | 砷化鎵 | zh_TW |
dc.subject | 氧化 | zh_TW |
dc.subject | 基態 | zh_TW |
dc.subject | 激發態 | zh_TW |
dc.subject | quantum dots | en_US |
dc.subject | laser | en_US |
dc.subject | GaAs | en_US |
dc.subject | oxidation | en_US |
dc.subject | ground state | en_US |
dc.subject | excited state | en_US |
dc.title | 半導體量子點雷射之研究 | zh_TW |
dc.title | Studies of Semiconductor Quantum Dot Lasers | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子研究所 | zh_TW |
Appears in Collections: | Thesis |
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