标题: | Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors |
作者: | Tang, Chun-Jung Wang, Tahui Chang, Chih-Sheng 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 5-十月-2009 |
摘要: | Quantum confinement effects on hole mobility in silicon and germanium double gate p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied by using a Monte Carlo method. Uniaxial stress and channel/substrate orientation effects are considered. Our result shows that the hole mobility in a (100)/[110] silicon well decreases with a decreasing well thickness, which is in agreement with the experimental result. The hole mobility in a germanium channel MOSFET, however, exhibits a peak in a sub-20 nm well because of the interplay between intrasubband and intersubband scatterings. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3244205] |
URI: | http://dx.doi.org/10.1063/1.3244205 http://hdl.handle.net/11536/6574 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3244205 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 95 |
Issue: | 14 |
结束页: | |
显示于类别: | Articles |
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