标题: Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
作者: Tang, Chun-Jung
Wang, Tahui
Chang, Chih-Sheng
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 5-十月-2009
摘要: Quantum confinement effects on hole mobility in silicon and germanium double gate p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied by using a Monte Carlo method. Uniaxial stress and channel/substrate orientation effects are considered. Our result shows that the hole mobility in a (100)/[110] silicon well decreases with a decreasing well thickness, which is in agreement with the experimental result. The hole mobility in a germanium channel MOSFET, however, exhibits a peak in a sub-20 nm well because of the interplay between intrasubband and intersubband scatterings. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3244205]
URI: http://dx.doi.org/10.1063/1.3244205
http://hdl.handle.net/11536/6574
ISSN: 0003-6951
DOI: 10.1063/1.3244205
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 14
结束页: 
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