Reflection-type normally-on two-wavelength modulator

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DC Field	Value	Language
dc.contributor.author	Tsai, CM	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:01:54Z	-
dc.date.available	2014-12-08T15:01:54Z	-
dc.date.issued	1997-03-27	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/658	-
dc.description.abstract	The authors demonstrate a novel reflection-type normally-on two-wavelength modulator by combining two quantum-well structures with different operating wavelengths in a coupled cavity structure. Reflection spectra show simultaneous modulations at wavelengths of 856 and 886 nm in the device consisting of GaAs/A1GaAs and InGaAs/A1GaAs quantum wells for each wavelength. Under separate applied voltages, maximum reflectivity changes of 70 and 54% were obtained for the two wavelengths. To the best of the authors' knowledge, this is the First two-wavelength reflection modulator ever reported.	en_US
dc.language.iso	en_US	en_US
dc.subject	semiconductor quantum wells	en_US
dc.subject	optical modulation	en_US
dc.title	Reflection-type normally-on two-wavelength modulator	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	7	en_US
dc.citation.spage	611	en_US
dc.citation.epage	613	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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