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dc.contributor.author王多柏en_US
dc.contributor.authorTo-Po Wangen_US
dc.contributor.author莊晴光en_US
dc.contributor.authorChing-Kuang C. Tzuangen_US
dc.date.accessioned2014-12-12T02:23:32Z-
dc.date.available2014-12-12T02:23:32Z-
dc.date.issued1999en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT880435064en_US
dc.identifier.urihttp://hdl.handle.net/11536/65900-
dc.description.abstract在本論文中,使用表面黏著技術和封裝的phemt來發展混成Ka頻段的震盪器已測試成功。用軟體模擬的結果和實際上量測到的震盪器頻率十分吻合。而且,大量、低價的生產Ka頻段的積體電路是可行的。 量測震盪器所到的頻率為27.33GHz,它的輸出功率為-9.83dBm。震盪器的偏壓條件為 VDS=2伏特, VGS=-0.2伏特, IDS=32毫安培。zh_TW
dc.description.abstractIn this thesis, a hybrid MIC Ka band oscillator has been developed and tested successfully employing the advanced SMT (surface mount technique) packaged PHEMT (pseudomorphic high electron mobility transistor). The simulated results based on SeriesIV and measured oscillator frequency agrees excellently. Also, it is feasible to product large volume, low cost Ka band integrated circuits. The measured oscillation frequency is 27.33 GHz, and the output power is –9.83dBm. The oscillator is biased at VDS=2 volt, VGS=-0.2 volt and the current IDS=32 mA.en_US
dc.language.isoen_USen_US
dc.subject震盪器zh_TW
dc.subjectOscillatoren_US
dc.title使用封裝電晶體設計Ka頻段之震盪器zh_TW
dc.titleKa-band Oscillator Design Applying Packaged Transistoren_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
Appears in Collections:Thesis