半導體雷射在外加能源下之混沌現象與混沌控制

Abstract

半導體雷射在不同的外加能源之下，會有不同的系統行為。我們運用了數值模擬的方法，觀察雷射二極體在不同外部能源注射下之動態行為。實驗中可以發現隨著輸入能量的增加，系統歷經了週期和非週期（混沌）等階段。此外，我們也試著在外加電流中，加入正弦擾動，來改變某特定系統之混沌行為。在這個實驗中，我們找到了四組參數，成功地將系統原有之混沌行為，調整為週期的輸出狀態。

We have numerically studied the behavior of a semiconductor laser subjected to the external injection. It is shown that a semiconductor laser can route to chaos by increasing the external injection. In this experiment, we found that the system starting in a lock region, and going by period, multiperiod and chaos regions. Besides, we also applied the high frequency injection technique to change a chaotic oscillation to a periodic oscillation for the experiment of controlling chaos. Some patterns of parameters had been found that can successfully change the chaotic behavior of the system.