以濺鍍法製備之鈣鈦礦結構氧化物薄膜之雙穩態導電率轉換記憶體元件

Abstract

以濺鍍法製備之鈣鈦礦結構氧化物薄膜之 雙穩態導電率轉換記憶體元件 學生：陳鍵賢 指導教授：曾俊元 教授 國立交通大學電子工程學系電子研究所碩士班

摘要

近來，由各種材料所研製的各類新式非揮發性記憶受到廣泛的注意。由於其具有雙穩態導電性，可在同一偏壓下表現出兩種不同導電率之特性。並且具有高寫入及讀取速度，非破壞性讀取，結構簡單（金屬—絕緣體—金屬之結構）的優點，將有助於達到高密度積體整合，低功率損失的目的。因此電阻式記憶體儼然成為下一世代非揮發性記憶體之候選人。 在本篇論文中，我們使用鈣鈦礦結構材料（鋯酸鍶）來研發電阻式記憶體。首先，我們將介紹鈣鈦礦結構及基本的電阻式記憶體特徵，諸如：負微分電阻及塑造進程。我們也會討論曾經發表過的電阻式記憶體可能傳導機制。在實驗的部分，我們使用濺鍍法製造釩摻雜的鋯酸鍶薄膜，並以鎳酸鑭作為底電極，鋁作為上電極來形成金屬—絕緣體—金屬的結構。其物理及電學特性我們將於第四章報告。除此之外，我們也將呈現元件研究結果的記憶體特性。並比較不同製程參數之差異，更進一步由實驗結果來討論可能的電阻式記憶體傳導機制。

Bistable Conductivity Switching Memory Devices Using Perovskite Oxide Thin Films By Sputtering Method Student: Jian-Shian Chen Advisor: Tseung-Yuen Tseng

Department of Electronics Engineering and Institute of Electronics National Chiao Tung University

Abstract

Recently, many kinds of new nonvolatile memory manufactured from different materials have attracted a large attention. Because of its bistable conductivity switching character, the device can exhibit two states of different conductivities at the same applied voltage. In addition, high speed of writing and access, nondestructive readout, simple device structure (Metal-Insulator-Metal structure) that is helpful for high density of integration, lower power consumption. Accordingly, the resistance random access memory (RRAM) has been proposed to be one candidate of next generation nonvolatile memory. In this thesis, we research and develop the RRAM device manufactured based on perovskite structure—SrZrO3. At first, we will introduce the perovskite structure and fundamental characters of RRAM such as negative differential resistance and forming process. We also discuss the conduction mechanisms of RRAM that have been published. In experimental part, vanadium (V) doped SrZrO3 film deposited by sputtering method is sandwiched between bottom electrode (LaNiO3) and top electrode (Aluminum) to form MIM structure. Its physical and electrical properties will be reported in chapter 4. Besides, we will present results of memory effect experiments, which match the criteria of recent memory product. The effect is also compared the difference with different process parameters; furthermore, the most possible mechanism according to our research results will be discussed.