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dc.contributor.authorChantarat, N.en_US
dc.contributor.authorChen, Yu-Weien_US
dc.contributor.authorChen, San-Yuanen_US
dc.contributor.authorLin, Chin-Chingen_US
dc.date.accessioned2014-12-08T15:08:41Z-
dc.date.available2014-12-08T15:08:41Z-
dc.date.issued2009-09-30en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/39/395201en_US
dc.identifier.urihttp://hdl.handle.net/11536/6649-
dc.description.abstractThe photoresponse behavior of one-dimensional ZnO nanowires (NWs) and nanotubes (NTs) grown on ITO-coated glass substrates via a wet-chemical route was investigated. The photoluminescence spectra exhibited a decrease in the deep-level intensity, indicating that the oxygen defects and impurities are occupied by the presence of N ions in the ZnO NT matrix after a nitrogen plasma treatment. I-V tests demonstrate an enhanced dark current (4.83 x 10(-7) A) after an extended plasma treatment of up to 900s for ZnO NTs compared to that (0.571 x 10(-7) A) of NWs. Furthermore, the ZnO NTs show the highest reliable photoresponse, 20 times that of NWs under UV irradiation (325 nm) in air at room temperature. It is believed that nitrogen plasma ZnO nanotubes can potentially be useful in the designs of 1D ZnO-based solar cells and optoelectronic devices.en_US
dc.language.isoen_USen_US
dc.titleEnhanced UV photoresponse in nitrogen plasma ZnO nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/20/39/395201en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue39en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000269553500004-
dc.citation.woscount14-
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