完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, WC | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.contributor.author | Huang, GW | en_US |
dc.contributor.author | Fang, FF | en_US |
dc.contributor.author | Chang, YH | en_US |
dc.contributor.author | Huang, CF | en_US |
dc.date.accessioned | 2014-12-08T15:01:55Z | - |
dc.date.available | 2014-12-08T15:01:55Z | - |
dc.date.issued | 1997-03-15 | en_US |
dc.identifier.issn | en_US | |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.36.L323 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/665 | - |
dc.description.abstract | In this study, high-quality Si/Si1-xGex/Si p-type modulation-doped heterostructures were grown by ultrahigh-vacuum/chemical vapor deposition (UHV/CVD). High-field magnetotransport measurements revealed Shubnikov-de Hass oscillations in the longitudinal magneto resistance and the integer quantum Hall effect in transverse magnetoresistance illustrating the presence of a well-confined two-dimensional hole gas. The mobilities of the two-dimensional hole gas, as high as 12500 cm(2)/V . s at 0.65 K, were obtained for normal (doped layer at surface side) modulation-doped heterostructures with x = 0.12 at a sheet carrier concentration of 3.45 x 10(11) cm(-2). In addition, for this heterostructure, temperature-dependent measurements of Shubnikov-de Hass oscillations in the range 0.65 K-2.4 K were taken and the hole effective mass of 0.295m(0) + 0.01m(0) was obtained. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | modulation-doped heterostructure | en_US |
dc.subject | Shubnikov de Hass oscillation | en_US |
dc.subject | quantum Hall effect | en_US |
dc.subject | two-dimension hole gas | en_US |
dc.subject | hole effective mass | en_US |
dc.title | Very high hole mobility in p-type Si/SiGe modulation-doped heterostructures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.36.L323 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 36 | en_US |
dc.citation.issue | 3B | en_US |
dc.citation.spage | L323 | en_US |
dc.citation.epage | L326 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1997WU03500004 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |