完整後設資料紀錄
DC 欄位語言
dc.contributor.author陳懋榮en_US
dc.contributor.authorMao-Rong Chenen_US
dc.contributor.author張 立en_US
dc.contributor.authorLi Changen_US
dc.date.accessioned2014-12-12T02:24:45Z-
dc.date.available2014-12-12T02:24:45Z-
dc.date.issued2000en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT890159004en_US
dc.identifier.urihttp://hdl.handle.net/11536/66628-
dc.description.abstract鑽石具有許多優異的材料性質,可以廣泛應用於電子、光電、光學與機械等領域,尤其是在電子、光電與光學領域的應用,需要高品質具方向性(oriented)或磊晶(epitaxial)的鑽石膜。但是,鑽石成核與成長機制仍有許多疑點待釐清,使得鑽石膜的量產製造及應用受到相當的限制。 本實驗中利用微波電漿化學氣相沈積法(MWCVD)及偏壓輔助成核法(BEN),藉由不同的加偏壓方式、改變CH4氣體濃度、壓力及微波輸入功率等條件,在CoSi2基材上成長鑽石膜,並在Si基材上作部分對照實驗,藉以比較。藉由XRD、SEM、EDS與XTEM的分析,希望能對鑽石膜在CoSi2基材上的成核與成長特性有所瞭解。 實驗結果顯示,在CoSi2基材上以負偏壓沈積鑽石,最密成核密度約大於1.5 x 107 cm-2左右,跟在Si基材之結果類似,都可以得到(100)面方向的鑽石,但是在CoSi2基材的上成核密度比Si基材低。在CoSi2基材上以正偏壓沈積鑽石,不易生成(100)面方向鑽石晶粒,但成核密度可以提高至約為大於6.4 x 109 cm-2左右。改變CH4氣體濃度及微波輸入功率會對鑽石膜的密度與形貌有影響。另外,電漿與電場的特性對於鑽石成核與成長階段的影響,也不容忽視。zh_TW
dc.description.abstractDiamond has many excellent material properties. It has the great potential to be extensively used in electronics, photo-electronics, optics and mechanical applications. The applications in electronics, photo-electronics and optics areas demand high-quality oriented or epitaxial diamond films. Although it has been shown that the epitaxial films can be deposited, there are still unknowns about the mechanisms of nucleation and growth for diamond. It makes the mass-production and applications of diamond films to be limited. In our experiments, we use the microwave plasma enhanced chemical vapor deposition method (MPCVD) and the bias-enhanced nucleation method (BEN) to grow diamond on CoSi2 substrates, by using different bias conditions such as different kind of electrodes, changing CH4 volume concentration, pressure and microwave input power etc. Diamond grown on Si substrates has been carried out for comparison. As a result, we find that we can grow (100) diamond crystals by using negative bias on both CoSi2 and Si substrates, the nucleation density of diamond is higher than 1.5 x 107 cm-2 on CoSi2 substrates which is lower than on Si substrates. However, the nucleation density of diamond higher than 6.4 x 109 cm-2 can be obtained by using positive bias on CoSi2 substrates. Whereas the (100) orientation of diamond crystals is lost. The nucleation density and morphology of diamond crystals are affected by changing CH4 volume concentration and microwave input power. Besides, the properties of plasma and electric field have effects on the nucleation and the growth stages of diamond, and should not be ignored.en_US
dc.language.isozh_TWen_US
dc.subject微波電漿化學氣相沈積法zh_TW
dc.subject偏壓輔助成核法zh_TW
dc.subject二矽化鈷zh_TW
dc.subject鑽石薄膜zh_TW
dc.subject負偏壓zh_TW
dc.subject正偏壓zh_TW
dc.subject二次電漿區域zh_TW
dc.subject侵蝕zh_TW
dc.subjectMWCVDen_US
dc.subjectBENen_US
dc.subjectCoSi2en_US
dc.subjectdiamond filmsen_US
dc.subjectnegative biasingen_US
dc.subjectpositive biasingen_US
dc.subjectsecondary plasma regionsen_US
dc.subjectetchingen_US
dc.title以微波電漿化學氣相沈積法在二矽化鈷基材上成長鑽石薄膜之研究zh_TW
dc.titleGrowth of diamond film on CoSi2 substrates by microwave plasma enhanced chemical vapor deposition methoden_US
dc.typeThesisen_US
dc.contributor.department材料科學與工程學系zh_TW
顯示於類別:畢業論文