Voltage-tunable two-color quantum-dot infrared photodetectors

doi:10.1063/1.3236543

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Shih-Yen	en_US
dc.contributor.author	Lin, Wei-Hsun	en_US
dc.contributor.author	Tseng, Chi-Che	en_US
dc.contributor.author	Chao, Kuang-Ping	en_US
dc.contributor.author	Mai, Shu-Cheng	en_US
dc.date.accessioned	2014-12-08T15:08:42Z	-
dc.date.available	2014-12-08T15:08:42Z	-
dc.date.issued	2009-09-21	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3236543	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6662	-
dc.description.abstract	A two-terminal quantum-dot infrared photodetector with stacked five-period InAs/GaAs and InGaAs-capped InAs/GaAs quantum-dot (QD) structures is investigated. The device has exhibited distinct responses at mid-wavelength and long-wavelength infrared regions under positive and negative biases, respectively. The results suggest that the QD confinement states near the anode side are completely filled, such that selective responses at different wavelength ranges would be observed for the stacked structure under different voltage polarities. Also observed are the similar absorption ratios of the device under different incident light polarizations at the two response regions. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3236543]	en_US
dc.language.iso	en_US	en_US
dc.title	Voltage-tunable two-color quantum-dot infrared photodetectors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.3236543	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	95	en_US
dc.citation.issue	12	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000270243800088	-
dc.citation.woscount	10	-
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