半導體元件物理中波茲曼方程式之蒙地卡羅解

Abstract

本研究中，我們模擬半導體元件中粒子的傳輸情形。在此，用蒙地卡羅(Monte Carlo)模擬方法來求解半導體元件物理中的波茲曼方程式(Boltzmann Transport Equation)。而分別討論兩種典型的蒙地卡羅模擬方法：單一粒子蒙地卡羅模擬(Single-Particle Monte Carlo Simulation)方法與自身一致蒙地卡羅模擬(Self-consistent Monte Carlo Simulation)方法，並討論其模擬的結果。

In this study, we devote ourselves to simulate the transport of particles in semiconductor devices. The Monte Carlo (MC) simulation is introduced to directly solve the Boltzmann Transport Equation (BTE) in semiconductor device physics. Two typical MC simulations, the single-particle MC simulation and the self-consistent MC (SCMC) simulation, are considered and some results are also presented.