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dc.contributor.authorWang, Y. -C.en_US
dc.contributor.authorAhn, H.en_US
dc.contributor.authorChuang, C. -H.en_US
dc.contributor.authorKu, Y. -P.en_US
dc.contributor.authorPan, C. -L.en_US
dc.date.accessioned2014-12-08T15:08:45Z-
dc.date.available2014-12-08T15:08:45Z-
dc.date.issued2009-09-01en_US
dc.identifier.issn0946-2171en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00340-009-3580-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/6693-
dc.description.abstractWe investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtosecond laser annealing is elucidated by optical-pump-terahertz-probe and terahertz time-domain spectroscopies. The transient conductivities of FLA-processed poly-Si with large (similar to 500 nm) and small (similar to 50 nm) grain sizes were both well fitted by the Drude model in the terahertz regime from 0.4 to 2 THz. The transient mobilities of these materials were determined to be 175 +/- 19.4 and 94.5 +/- 20.2 cm(2)/V s, respectively. After annealing, reduction of deep-state density rather than tail-state density in large-grain poly-Si is responsible for its higher mobility.en_US
dc.language.isoen_USen_US
dc.titleGrain-size-related transient terahertz mobility of femtosecond-laser-annealed polycrystalline siliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00340-009-3580-2en_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.citation.volume97en_US
dc.citation.issue1en_US
dc.citation.spage181en_US
dc.citation.epage185en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000269844700023-
dc.citation.woscount2-
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